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 T-1 3/4 PACKAGE PIN PHOTODIODE
Description
The MID-56H19 is a photo diode mounted in special dark end look plastic package and suitable for the IRED (850nm/880nm) Type.
7.62 (.300) 5.90 (.230) 1.00 (.040)
MID-56H19
Package Dimensions
r .05 5
(.200)
Unit: mm ( inches )
5.47 (.215)
Features
l l l l l
FLAT DENOTES CATHOD
High photo sensitivity Low junction capacitance High cut-off frequency Fast switching time Acceptance viwe angle : 60
1.00MIN. (.040) 2.54 (.100) 0.50TYP. (.020) 23.40MIN. (.920)
A
C
Application
l
Data communication
Notes : 1.Tolerance is 0.25 mm (.010") unless otherwise noted. 2.Protruded resin under flange is 1.0 mm (.040") max. 3.Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25 C Parameter Power Dissipation Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 150 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds
o o o o o
Unit mW
Unity Opto Technology Co., Ltd.
02/04/2002
MID-56H19
Optical-Electrical Characteristics
@ TA=25oC Parameter Reverse Break Down Voltage Reverse Dark Current Open Circuit Voltage Rise Time Light Current Total Capacitance Test Conditions IR=100A Ee=0 VR=10V Ee=0 =850nm Ee=0.1mW/cm2 VR =10V,=850nm RL=50 VR =5V , =850nm Ee=0.1mW/cm2 VR =3V , f=1MHZ Ee=0 Symbol V(BR)R ID VOC Tr Tf IL CT 7 350 40 30 12 25 Min. 30 30 Type . Max. Unit V nA mV nsec A pF
Typical Optical-Electrical Characteristic Curves
4000 100
Capacitance C - pF
Dark Current - pA
3000
80 60 40 20 0
2000
1000
0 0 5 10 15 20
0.01
0.1
1
10
100
Reverse Voltage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TEMP=25 C , Ee=0 mW/cm Total Power Dissipation mW
200
o 2
Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ, Ee=0mW/cm
1000
2
150
Dark Current IR - nA
100
100
10
50
1
0 0 20 40 60 80 100
0.1 0 20 40 60 80 100
Ambient Temperature -oC FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE
Ambient Temperature-oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE VR=10, Ee=0 mw/cm
2
Unity Opto Technology Co., Ltd.
02/04/2002
MID-56H19
Typical Optical-Electrical Characteristic Curves
100 1000
Relative Spectral Sensitivity
80 60 40 20 0
700 800 900 1000 1100 1200
Ip - A Photocurrnet
100
10
1
0.1 0.01 0. 1 1 10
Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH
Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 850 nm
0 10 20 30 40
Relative Sensitivity
1.0 0.9 0.8
50 60 70 80 90 0.5 0.3 0.1 0.2 0.4 0.6
FIG.7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002


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